INFLUENCE DE LA NATURE DE L'OXYDE SUR LA DEGRADATION PAR IRRADIATION DES STRUCTURES MOSCHAPEAU A; BUXO J; SARRABAYROUSE G et al.1973; C.R. ACAD. SCI., B; FR.; DA. 1973; VOL. 276; NO 12; PP. 459-462; BIBL. 6 REF.Serial Issue

APPLICATION DES DISPOSITIFS MISS AUX INVERSEURS A HAUTE CAPACITE DE CHARGESARRABAYROUSE G; ESSAID A; BUXO J et al.1982; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1982; VOL. 17; NO 10; PP. 681-685; ABS. ENG; BIBL. 9 REF.Article

THE INFLUENCE OF SURFACE STATES ON THE ELECTRICAL CHARACTERISTICS OF TUNNELING MIS SCHOTTKY BARRIERS.SARRABAYROUSE G; BUXO J; ESTEVE D et al.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 46; NO 1; PP. 185-190; ABS. ALLEM.; BIBL. 17 REF.Article

REALISATION DE RESISTANCES DE FORTES VALEURS PAR IMPLANTATION D'IONS METALLIQUES DANS LA SILICE THERMIQUE.ESTEVE D; BUXO J; SARRABAYROUSE G et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 302-311; BIBL. 5 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVEME CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

CHEMICAL VAPOR DEPOSITION OF A1N AND ELECTRICAL CHARACTERISTICS OF A1-A1N-SI STRUCTURESBOUTEVILLE A; PAULEAU Y; HANTZPERGUE JJ et al.1981; INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION. 8/1981/GOUVIEUX; USA; PENNINGTON NJ: THE ELECTROCHEMICAL SOCIETY; DA. 1981; PP. 393-402; BIBL. 17 REF.Conference Paper

A MODEL FOR THE LARGE-AMPLITUDE HYSTERESIS IN MIS STRUCTURES ON INSBBUXO J; ESTEVE D; FARRE J et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 11; PP. 969-971; BIBL. 11 REF.Article

Cinétique de croissance et propriétés électriques des couches de silice obtenues sous irradiation infrarouge = Growth kinetics and electrical properties of silica layers obtained under infrared illuminationSARRABAYROUSE, G; GUEDJ, A.Journal de physique (Paris). 1988, Vol 23, Num 6, pp 1135-1138, issn 0302-0738Article

Homogénéité d'épaisseur et propriétés électriques des couches minces de silice obtenues dans un mélange N₂/O₂/HCl = Thickness homogeneity and electrical properties of thin silica layers obtained in a N₂/HCl/O₂ mixtureSARRABAYROUSE, G; CAPILLA, J.Revue de physique appliquée. 1985, Vol 20, Num 2, pp 87-91, issn 0035-1687Conference Paper

INFLUENCE DE LA TEMPERATURE SUR LA VITESSE LIMITE DES PORTEURS DANS UN TRANSISTOR M.O.S. A CANAL COURTGAMBOA M; SARRABAYROUSE G; TANDUC H et al.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 5; PP. 973-975; ABS. ENG; BIBL. 7 REF.Article

ELECTRICAL AND ELASTORESISTANCE PROPERTIES OF EVAPORATED THIN FILMS OF BISMUTHSALEH M; BUXO J; DORVILLE G et al.1979; REV. PHYS. APPL.; FRA; DA. 1979; VOL. 14; NO 2; PP. 405-413; ABS. FRE; BIBL. 27 REF.Article

STRUCTURAL STUDY OF BISMUTH FILMS AND ITS CONSEQUENCES ON THEIR ELECTRICAL PROPERTIES = ETUDE STRUCTURALE DE COUCHES MINCES DE BI ET SES CONSEQUENCES SUR SES PROPRIETES ELECTRIQUESBUXO J; LALEH M; SARRABAYROUSE G et al.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 5; PP. 961-972; ABS. FRE; BIBL. 36 REF.Article

Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regionsNOULIS, T; SISKOS, S; SARRABAYROUSE, G et al.Microelectronics and reliability. 2007, Vol 47, Num 8, pp 1222-1227, issn 0026-2714, 6 p.Article

Electrical conduction in mos capacitors with an ultra-thin oxide layerKASSMI, K; PROM, J. L; SARRABAYROUSE, G et al.Solid-state electronics. 1991, Vol 34, Num 5, pp 509-514, issn 0038-1101Article

Influence of ionising irradiation on the channel mobility of MOS transistorsBELLAOUAR, A; SARRABAYROUSE, G; ROSSEL, P et al.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 4, pp 184-186, issn 0143-7100Article

The MISS device: modelling and influence of critical parametersFIORE DE MATTOS, A. C; SARRABAYROUSE, G.Physica status solidi. A. Applied research. 1985, Vol 87, Num 2, pp 699-707, issn 0031-8965Article

ON THE INFLUENCE OF IONIZING RADIATION ON THE ELECTRICAL PROPERTIES OF SHORT-CHANNEL MOS TRANSISTORSSARRABAYROUSE G; GAMBOA M; BUXO J et al.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 5; PP. 941-944; ABS. FRE; BIBL. 5 REF.Article

Etudes des interfaces Silicium-Silicium obtenues par soudure directe de plaquettes = Studies of the Silicon-Silicon interfaces obtained by directly bonded wafersLaporte Ottolini, Angeline; Sarrabayrouse, G.1995, 150 p.Thesis

Defect compensation at the interface between directly bonded silicon wafersLAPORTE, A; LESCOUZERES, L; PEYRELAVIGNE, A et al.Materials science and technology. 1998, Vol 14, Num 12, pp 1299-1302, issn 0267-0836Conference Paper

Organic electronic devices using regioregular poly(3-octylthiophene) as an semiconducting materialBALLET, J; LEGUERRE, R; DELABOUGLISE, D et al.International symposium on industrial electronics. 2004, isbn 0-7803-8304-4, 2Vol, Vol2, 1403-1406Conference Paper

Improvement of the electrical properties of metal-SiO₂-silicon capacitors by a preoxidation HF/ethanol clean of the substratePROM, J. L; MORFOULI, P; KASSMI, K et al.IEE proceedings. Part G. Circuits devices and systems. 1991, Vol 138, Num 3, pp 321-324, issn 0956-3768Article

Effect of technology on the input transistor selection criteria of a low noise preamplifierNOULIS, T; SISKOS, S; SARRABAYROUSE, G et al.Mediterranean electrotechnical conference. 2004, isbn 0-7803-8271-4, 3Vol, Vol.1, 51-54Conference Paper

Reliability characterization of LDMOS transistors submitted to multiple energy dischargesBOSC, Jean-Marc; PERCHERON-GARCON, Isabelle; HUYNH, Estelle et al.ISPO'2000 : international symposium on power semiconductor devices and IC's. 2000, pp 165-168, isbn 0-7803-6269-1Conference Paper

Optical amplification studies in Si nanocrystals-based waveguides prepared by ion-beam synthesisLEBOUR, Y; NAVARRO-URRIOS, D; PELLEGRINO, P et al.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 6, pp 1044-1047, issn 1386-9477, 4 p.Article

Characterisation of P floating islands for 150-200 V FLYMOSFETsWEBER, Y; ROIG, J; REYNES, J.-M et al.IET circuits, devices & systems (Print). 2007, Vol 1, Num 5, pp 333-340, issn 1751-858X, 8 p.Conference Paper

PV Conversion of Energetic Photons of the Solar SpectrumKUZNICKI, Z. T; MEYRUEIS, P; SARRABAYROUSE, G et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 700204.1-700204.10, issn 0277-786X, isbn 978-0-8194-7200-7Conference Paper